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Correlation of the 5.0- and 7.6-eV absorption bands inSiO2with oxygen vacancy

Tohmon, Ryoichi, Mizuno, Hiroyasu, Ohki, Yoshimichi, Sasagane, Kotoku, Nagasawa, Kaya, Hama, Yoshimasa·1989·Physical Review B

Abstract

Various uv and vacuum-uv optical-absorption bands found in as-manufactured high-purity ${\mathrm{SiO}}_{2}$ glass were studied. Two types of absorption bands were found near 5.0 eV, one of which is attributed to the oxygen vacancy (?Si-Si?). The absorption band at 7.6 eV is also found to be caused by the same oxygen vacancy. Observation of the decay lifetime of photoluminescence and calculations using the ab initio molecular-orbital program show that the 7.6-eV band is caused by a singlet-to-singlet transition, while the 5.0-eV band is caused by a singlet-to-triplet transition.

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Metadata

Authors
Tohmon, R., Mizuno, H., Ohki, Y., Sasagane, K., Nagasawa, K., & Hama, Y.
Venue
Physical Review B
Published
1989-01-15
Volume
39
Issue
2
Pages
1337-1345
ISSN
0163-1829 (ISSN-L)
OpenAlex
W2088552693
Cited by
329
References
0
FWCI
17.77
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Correlation of the 5.0- and 7.6-eV absorption bands inSiO2with oxygen vacancy. https://app.cochat.ai/papers/10.1103/physrevb.39.1337
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Tohmon, R., Mizuno, H., Ohki, Y., Sasagane, K., Nagasawa, K., & Hama, Y. (1989). Correlation of the 5.0- and 7.6-eV absorption bands inSiO2with oxygen vacancy. Physical Review B. https://doi.org/10.1103/physrevb.39.1337

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