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Ultrafast carrier dynamics in semiconductor quantum dots

Klimov, V., Bolivar, P. Haring, Kurz, H.·1996·Physical Review B

Abstract

The dynamics of band-edge photoluminescence (PL) in CdS nanocrystals (NC's) dispersed in a glass matrix are studied with the femtosecond up-conversion technique. The time-resolved PL spectra exhibit several discrete features (three of them are in the NC energy band gap) which are not pronounced in a cw PL spectrum. The initial stage of a PL decay is governed by a depopulation of the lowest extended states due to carrier trapping (localization) on the time scale of 1 ps. The low-energy bands originating from the extended-to-localized state transitions exhibit extremely fast buildup dynamics (rise time is 400--700 fs) which is explained by the preexisting occupation of the localized states. \textcopyright{} 1996 The American Physical Society.

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Metadata

Authors
Klimov, V., Bolivar, P. H., & Kurz, H.
Venue
Physical Review B
Published
1996-01-15
Volume
53
Issue
3
Pages
1463-1467
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2014970095
Cited by
193
References
0
FWCI
10.13
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ultrafast carrier dynamics in semiconductor quantum dots. https://app.cochat.ai/papers/10.1103/physrevb.53.1463
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Klimov, V., Bolivar, P. H., & Kurz, H. (1996). Ultrafast carrier dynamics in semiconductor quantum dots. Physical Review B. https://doi.org/10.1103/physrevb.53.1463

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