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Cited by 175

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Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

Pronko, P. P., VanRompay, P. A., Horvath, C., Loesel, F., Juhasz, T., Liu, X., Mourou, G.·1998·Physical Review B

Abstract

Experimental evidence is presented demonstrating avalanche ionization as the dominant mechanism for dielectric breakdown in silicon with ultrafast laser pulses at above-gap photon energies. Data are presented for pulses between 80 fs and 9 ns at 786 nm and 1.06 \ensuremath{\mu}m. Associated electric fields range from 0.3 to 40 MV/cm. Avalanche ionization coefficients range from ${10}^{10}$ to ${10}^{14} {\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$ and are discussed in relation to semiempirical dc ionization theory and recent ac Monte Carlo calculations. Correlation is obtained between electron collision times and associated ionization rates.

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Authors
Pronko, P. P., VanRompay, P. A., Horvath, C., Loesel, F., Juhasz, T., Liu, X., & Mourou, G.
Venue
Physical Review B
Published
1998-08-01
Volume
58
Issue
5
Pages
2387-2390
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2004705091
Cited by
175
References
0
FWCI
2.45
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses. https://app.cochat.ai/papers/10.1103/physrevb.58.2387
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Pronko, P. P., VanRompay, P. A., Horvath, C., Loesel, F., Juhasz, T., Liu, X., & Mourou, G. (1998). Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses. Physical Review B. https://doi.org/10.1103/physrevb.58.2387

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.