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Coupling of InGaN quantum-well photoluminescence to silver surface plasmons

Gontijo, I., Boroditsky, M., Yablonovitch, E., Keller, S., Mishra, U. K., DenBaars, S. P.·1999·Physical Review B

Abstract

The coincidence in excitation energy between surface plasmons on silver and the GaN band gap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. A 3-nm InGaN/GaN quantum well (QW) is positioned 12 nm from an 8-nm silver layer, well within the surface plasmon fringing field depth. A spectrally sharp photoluminescence dip, by a factor \ensuremath{\approx}55, indicates that electron-hole energy is being rapidly transferred to plasmon excitation, due to the spatial overlap between the semiconductor QW and the surface plasmon electric field. Thus, spontaneous emission into surface plasmons is \ensuremath{\approx}55 times faster than normal spontaneous emission from InGaN quantum wells. If efficient antenna structures can be incorporated into the metal film, there could be a corresponding increase in external light emission efficiency.

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Metadata

Authors
Gontijo, I., Boroditsky, M., Yablonovitch, E., Keller, S., Mishra, U. K., & DenBaars, S. P.
Venue
Physical Review B
Published
1999-10-15
Volume
60
Issue
16
Pages
11564-11567
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2033539709
Cited by
344
References
1
FWCI
1.05
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Coupling of InGaN quantum-well photoluminescence to silver surface plasmons. https://app.cochat.ai/papers/10.1103/physrevb.60.11564
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Gontijo, I., Boroditsky, M., Yablonovitch, E., Keller, S., Mishra, U. K., & DenBaars, S. P. (1999). Coupling of InGaN quantum-well photoluminescence to silver surface plasmons. Physical Review B. https://doi.org/10.1103/physrevb.60.11564

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