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Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends
Abstract
We have studied systematically the chemical trends of the band-gap pressure coefficients of all group IV, III-V, and II-VI semiconductors using first-principles band-structure method. We have also calculated the individual ``absolute'' deformation potentials of the valence-band maximum (VBM) and conduction-band minimum (CBM). We find that (1) the volume deformation potentials of the ${\ensuremath{\Gamma}}_{6c}$ CBM are usually large and always negative, while (2) the volume deformation potentials of the ${\ensuremath{\Gamma}}_{8v}$ VBM state are usually small and negative for compounds containing occupied valence d state but positive for compounds without occupied valence d orbitals. Regarding the chemical trends of the band-gap pressure coefficients, we find that (3) ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}}$ decreases as the ionicity increases (e.g., from $\mathrm{G}\stackrel{\ensuremath{\rightarrow}}{e}\mathrm{GaA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{ZnSe}),$ (4) ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}}$ increases significantly as anion atomic number increases (e.g., from $\mathrm{Ga}\stackrel{\ensuremath{\rightarrow}}{N}\mathrm{Ga}\stackrel{\ensuremath{\rightarrow}}{P}\mathrm{GaA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{GaSb}),$ (5) ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}}$ decreases slightly as cation atomic number increases (e.g., from $\mathrm{AlA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{GaA}\stackrel{\ensuremath{\rightarrow}}{s}\mathrm{InAs}),$ (6) the variation of ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}L}$ are relatively small and follow similar trends as ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Gamma}},$ and (7) the magnitude of ${a}_{p}^{\ensuremath{\Gamma}\ensuremath{-}X}$ are small and usually negative, but are sometimes slightly positive for compounds containing first-row elements. Our calculated chemical trends are explained in terms of the energy levels of the atomic valence orbitals and coupling between these orbital. In light of the above, we suggest that ``empirical rule'' of the pressure coefficients should be modified.
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Citations
Cites
Self-Consistent Equations Including Exchange and Correlation Effects
Kohn, W., & Sham, L. J. (1965) · Physical Review · doi:10.1103/physrev.140.a1133 · Cited by 64,135
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
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Xi, J., Long, M., Tang, L., Wang, D., & Shuai, Z. (2012) · Nanoscale · doi:10.1039/c2nr30585b · Cited by 708
Efficient calculation of carrier scattering rates from first principles
Ganose, A. M., Park, J., Faghaninia, A., Woods-Robinson, R., Persson, K. A., & Jain, A. (2021) · Nature Communications · doi:10.1038/s41467-021-22440-5 · Cited by 688
Guo, R., Wang, X., Kuang, Y., & Huang, B. (2015) · Physical Review B · doi:10.1103/physrevb.92.115202 · Cited by 527
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Rinke, P., Winkelnkemper, M., Qteish, A., Bimberg, D., Neugebauer, J., & Scheffler, M. (2008) · Physical Review B · doi:10.1103/physrevb.77.075202 · Cited by 411
Metadata
- Authors
- Wei, S.-H., & Zunger, A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1999-08-15
- Volume
- 60
- Issue
- 8
- Pages
- 5404-5411
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2060500958
- Cited by
- 618
- References
- 2
- FWCI
- 12.03
- Type
- journal article
- Language
- en
- Open access
- closed
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