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Ultrafast dynamics of inter- and intraband transitions in semiconductor nanocrystals: Implications for quantum-dot lasers

Klimov, V. I., Schwarz, Ch. J., McBranch, D. W., Leatherdale, C. A., Bawendi, M. G.·1999·Physical Review B

Abstract

Application of femtosecond transient absorption in the visible and near-IR spectral ranges and time-resolved photoluminescence allows us to separate electron and hole relaxation paths and to map the structure of interband and intraband optical transitions in CdSe and CdS nanocrystals (NC's) with a wide range of surface properties. In contrast to electron relaxation, which is controlled by NC surface passivation, depopulation of hole quantized states is extremely fast (sub-ps-to-ps time scales) in all types samples, independent of NC surface treatment (including NC's overcoated with a ZnS layer). Our results suggest that ultrafast hole dynamics are not due to trapping at localized surface defects such as a vacancy, but rather arise from relaxation into intrinsic NC states or intrinsically unpassivated interface states.

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Metadata

Authors
Klimov, V. I., Schwarz, C. J., McBranch, D. W., Leatherdale, C. A., & Bawendi, M. G.
Venue
Physical Review B
Published
1999-07-15
Volume
60
Issue
4
Pages
R2177-R2180
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W1998682694
Cited by
236
References
0
FWCI
10.86
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ultrafast dynamics of inter- and intraband transitions in semiconductor nanocrystals: Implications for quantum-dot lasers. https://app.cochat.ai/papers/10.1103/physrevb.60.r2177
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Klimov, V. I., Schwarz, C. J., McBranch, D. W., Leatherdale, C. A., & Bawendi, M. G. (1999). Ultrafast dynamics of inter- and intraband transitions in semiconductor nanocrystals: Implications for quantum-dot lasers. Physical Review B. https://doi.org/10.1103/physrevb.60.r2177

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