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Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions

Klimov, V. I., Mikhailovsky, A. A., McBranch, D. W., Leatherdale, C. A., Bawendi, M. G.·2000·Physical Review B

Abstract

To evaluate the role of nonphonon energy relaxation mechanisms in quantum dots and in particular the role of electron-hole (e-h) interactions, we have studied femtosecond carrier dynamics in CdSe colloidal nanoparticles in which the e-h separation (coupling) is controlled using different types of surface ligands. In dots capped with hole accepting molecules, the e-h coupling is strongly reduced after the hole is transferred to a capping group. By re-exciting an electron within the conduction band at different stages of hole transfer and monitoring its relaxation back into the ground state, we observe a more than tenfold increase in the electron relaxation time (from 250 fs to 3 ps) after the completion of the hole transfer to the capping molecule. This strongly indicates that electron relaxation in quantum dots is dominated not by phonon emission but by the e-h energy transfer.

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Metadata

Authors
Klimov, V. I., Mikhailovsky, A. A., McBranch, D. W., Leatherdale, C. A., & Bawendi, M. G.
Venue
Physical Review B
Published
2000-05-15
Volume
61
Issue
20
Pages
R13349-R13352
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2066091879
Cited by
270
References
0
FWCI
9.63
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions. https://app.cochat.ai/papers/10.1103/physrevb.61.r13349
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Klimov, V. I., Mikhailovsky, A. A., McBranch, D. W., Leatherdale, C. A., & Bawendi, M. G. (2000). Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions. Physical Review B. https://doi.org/10.1103/physrevb.61.r13349

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