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Cited by 401

The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.

First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen

Blöchl, Peter E.·2000·Physical Review B

Abstract

Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the ${E}_{4}^{\ensuremath{'}}$ center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.

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Crossref · 10.1103/physrevb.62.6158

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Metadata

Authors
Blöchl, P. E.
Venue
Physical Review B
Published
2000-09-01
Volume
62
Issue
10
Pages
6158-6179
ISSN
  • 0163-1829 (ISSN-L)
  • 1095-3795
OpenAlex
W2085698034
Cited by
401
References
34
FWCI
18.19
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen. https://app.cochat.ai/papers/10.1103/physrevb.62.6158
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Blöchl, P. E. (2000). First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen. Physical Review B. https://doi.org/10.1103/physrevb.62.6158

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.