The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.
First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
Abstract
Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles density-functional calculations. Energetics, structures, charge-state levels, and hyperfine parameters are determined. These calculations identify the hydrogen bridge related to the ${E}_{4}^{\ensuremath{'}}$ center as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown of gate oxides in transistors.
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Cites
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Metadata
- Authors
- Blöchl, P. E.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2000-09-01
- Volume
- 62
- Issue
- 10
- Pages
- 6158-6179
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2085698034
- Cited by
- 401
- References
- 34
- FWCI
- 18.19
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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