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Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
Open accessAbstract
We have calculated the spin-polarization effects of a current in a two-dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1% only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.
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Cited by
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Tombros, N., Jozsa, C., Popinciuc, M., Jonkman, H. T., & van Wees, B. J. (2007) · Nature · doi:10.1038/nature06037 · Cited by 2,369
Self-citationNonlocal magnetization dynamics in ferromagnetic heterostructures
Tserkovnyak, Y., Brataas, A., Bauer, G. E. W., & Halperin, B. I. (2005) · Reviews of Modern Physics · doi:10.1103/revmodphys.77.1375 · Cited by 1,315
Naber, W. J. M., Faez, S., & Wiel, W. G. V. D. (2007) · Journal of Physics D: Applied Physics · doi:10.1088/0022-3727/40/12/r01 · Cited by 459
Dissipationless Anomalous Hall Current in the Ferromagnetic Spinel CuCr 2 Se 4- x Br x
Lee, W.-L., Watauchi, S., Miller, V. L., Cava, R. J., & Ong, N. P. (2004) · Science · doi:10.1126/science.1094383 · Cited by 223
Metadata
- Authors
- Schmidt, G., Ferrand, D., Molenkamp, L. W., Filip, A. T., & van Wees, B. J.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2000-08-15
- Volume
- 62
- Issue
- 8
- Pages
- R4790-R4793
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2084838123
- Cited by
- 1,997
- References
- 0
- FWCI
- 60.69
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Schmidt, G., Ferrand, D., Molenkamp, L. W., Filip, A. T., & van Wees, B. J. (2000). Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Physical Review B. https://doi.org/10.1103/physrevb.62.r4790
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