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Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
Open accessAbstract
Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with diameter below $10\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$, the ionization of the impurities at $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ is strongly reduced and heavy doping is necessary to obtain conductive systems. These results imply that the critical density for metal-nonmetal transitions is not the same as in the bulk. Experiments are proposed to test the predictions.
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Cites
Growth of nanowire superlattice structures for nanoscale photonics and electronics
Gudiksen, M. S., Lauhon, L. J., Wang, J., Smith, D. C., & Lieber, C. M. (2002) · Nature · doi:10.1038/415617a · Cited by 2,709
Cited by
Donor deactivation in silicon nanostructures
Björk, M. T., Schmid, H., Knoch, J., Riel, H., & Riess, W. (2009) · Nature Nanotechnology · doi:10.1038/nnano.2008.400 · Cited by 332
Colloquium: Structural, electronic, and transport properties of silicon nanowires
Rurali, R. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.427 · Cited by 318
Resistivity and surface states density of n- and p-type silicon nanowires
Vaurette, F., Nys, J. P., Deresmes, D., Grandidier, B., & Stiévenard, D. (2008) · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena · doi:10.1116/1.2908438 · Cited by 20
Extraction of Doping Concentration and Interface State Density in Silicon Nanowires
Park, J. T., Kim, J. Y., & Islam, M. S. (2011) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2010.2094203 · Cited by 14
Metadata
- Authors
- Diarra, M., Niquet, Y.-M., Delerue, C., & Allan, G.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2007-01-03
- Volume
- 75
- Issue
- 4
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2089805796
- Cited by
- 278
- References
- 1
- FWCI
- 11.89
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Diarra, M., Niquet, Y.-M., Delerue, C., & Allan, G. (2007). Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement. Physical Review B. https://doi.org/10.1103/physrevb.75.045301
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