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Pit formation during graphene synthesis on SiC(0001):In situ electron microscopy
Abstract
We have studied the formation of graphene on the Si face of SiC(0001)-6H and -4H using in situ electron microscopy. By imaging the nucleation and growth of the $6\sqrt{3}$ ``buffer layer'' during annealing in vacuum we identify key factors responsible for the appearance of deep pits during graphene formation. Pits form because domains of the buffer layer pin decomposing surface steps. Graphene is observed to nucleate in the pits, where the step density is high.
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Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
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Edwards, R. S., & Coleman, K. S. (2013) · Nanoscale · doi:10.1039/c2nr32629a · Cited by 773
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Presser, V., Heon, M., & Gogotsi, Y. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201002094 · Cited by 678
Growth of epitaxial graphene: Theory and experiment
Tetlow, H., Posthuma de Boer, J., Ford, I. J., Vvedensky, D. D., Coraux, J., & Kantorovich, L. (2014) · Physics Reports · doi:10.1016/j.physrep.2014.03.003 · Cited by 274
Metadata
- Authors
- Hannon, J. B., & Tromp, R. M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2008-06-26
- Volume
- 77
- Issue
- 24
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2064279871
- Cited by
- 161
- References
- 1
- FWCI
- 11.12
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hannon, J. B., & Tromp, R. M. (2008). Pit formation during graphene synthesis on SiC(0001):In situ electron microscopy. Physical Review B. https://doi.org/10.1103/physrevb.77.241404
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