The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes
Abstract
The effect of free holes on the optical phonons of Si at the zone center is investigated with Raman scattering. The presence of holes produces an inter-valence-band, electronic, broad, scattering background which overlaps with the one-phonon Raman line. This overlap results in a Fano-type continuous-discrete interference. The parameters $\ensuremath{\Gamma}$ and $q$ of the resulting Fano scattering line can be varied by changing (a) the laser wavelength and (b) the free-carrier concentration. A theoretical interpretation of these results based on the detailed valence-band structure of Si and on the resonant characteristics of the vibronic and electronic Raman scattering is presented. The effect of uniaxial stress on this composite Raman scattering of $p$-type Si is also investigated. At large stresses the electronic background disappears and the phonon lines recover the linewidths of the intrinsic material. The behavior in the intermediate-stress range is very similar to that reported for the acoustical phonons in the previous paper.
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Citations
Cites
Effects of Configuration Interaction on Intensities and Phase Shifts
Fano, U. (1961) · Physical Review · doi:10.1103/physrev.124.1866 · Cited by 11,165
Cerdeira, F., Buchenauer, C. J., Pollak, F. H., & Cardona, M. (1972) · Physical Review B · doi:10.1103/physrevb.5.580 · Cited by 899
Self-citationPiezo-Electroreflectance in Ge, GaAs, and Si
Pollak, F. H., & Cardona, M. (1968) · Physical Review · doi:10.1103/physrev.172.816 · Cited by 855
Self-citationEffect of static uniaxial stress on the Raman spectrum of silicon
Anastassakis, E., Pinczuk, A., Burstein, E., et al. (1970) · Solid State Communications · doi:10.1016/0038-1098(70)90588-0 · Cited by 605
Hensel, J. C., & Feher, G. (1963) · Physical Review · doi:10.1103/physrev.129.1041 · Cited by 464
The valence band structure of the III–V compounds
Braunstein, R., & Kane, E. O. (1962) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(62)90195-6 · Cited by 250
Effects of Uniaxial Stress on the Indirect Exciton Spectrum of Silicon
Laude, L. D., Pollak, F. H., & Cardona, M. (1971) · Physical review. B, Solid state · doi:10.1103/physrevb.3.2623 · Cited by 245
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Cited by
Krausz, F., & Ivanov, M. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.163 · Cited by 5,468
Raman spectroscopy of graphene-based materials and its applications in related devices
Wu, J.-B., Lin, M.-L., Cong, X., Liu, H.-N., & Tan, P.-H. (2018) · Chemical Society Reviews · doi:10.1039/c6cs00915h · Cited by 2,092
Properties of GaN and related compounds studied by means of Raman scattering
Harima, H. (2002) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/14/38/201 · Cited by 699
Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets
Zhang, J., Peng, Z., Soni, A., Zhao, Y., Xiong, Y., Peng, B., Wang, J., Dresselhaus, M. S., & Xiong, Q. (2011) · Nano Letters · doi:10.1021/nl200773n · Cited by 511
Metadata
- Authors
- Cerdeira, F., Fjeldly, T. A., & Cardona, M.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1973-11-15
- Volume
- 8
- Issue
- 10
- Pages
- 4734-4745
- ISSN
- 0556-2805 (ISSN-L)
- OpenAlex
- W4230174417
- Cited by
- 466
- References
- 7
- FWCI
- 3.13
- Type
- journal article
- Language
- en
- Open access
- closed
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