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Colossal negative magnetoresistance in dilute fluorinated graphene

Open access
Hong, X., Cheng, S.-H., Herding, C., Zhu, J.·2011·Physical Review B

Abstract

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled, and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual staircaselike field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. These observations cannot be explained by existing theories, but likely require adatom-induced magnetism and/or a metal-insulator transition driven by quantum interference.

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Metadata

Authors
Hong, X., Cheng, S.-H., Herding, C., & Zhu, J.
Venue
Physical Review B
Published
2011-02-14
Volume
83
Issue
8
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2124725681
Cited by
174
References
1
FWCI
11.31
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Colossal negative magnetoresistance in dilute fluorinated graphene. https://app.cochat.ai/papers/10.1103/physrevb.83.085410
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Hong, X., Cheng, S.-H., Herding, C., & Zhu, J. (2011). Colossal negative magnetoresistance in dilute fluorinated graphene. Physical Review B. https://doi.org/10.1103/physrevb.83.085410

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