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Grain boundary loops in graphene
Open accessAbstract
Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy or interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a ``flower'' pattern in scanning tunneling microscopy studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.
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Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Self-citationElectronic properties of disordered two-dimensional carbon
Peres, N. M. R., Guinea, F., & Castro Neto, A. H. (2006) · Physical Review B · doi:10.1103/physrevb.73.125411 · Cited by 1,445
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Structure of graphene and its disorders: a review
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Metadata
- Authors
- Cockayne, E., Rutter, G. M., Guisinger, N. P., Crain, J. N., First, P. N., & Stroscio, J. A.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2011-05-12
- Volume
- 83
- Issue
- 19
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1974943886
- Cited by
- 187
- References
- 2
- FWCI
- 11.46
- Type
- journal article
- Language
- en
- Open access
- green
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- Cockayne, E., Rutter, G. M., Guisinger, N. P., Crain, J. N., First, P. N., & Stroscio, J. A. (2011). Grain boundary loops in graphene. Physical Review B. https://doi.org/10.1103/physrevb.83.195425
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