The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Band-gap transition induced by interlayer van der Waals interaction in MoS2
Abstract
We have investigated the electronic structures of single- and double-layered MoS${}_{2}$, composing of heterojunction structures such as graphene, MoS${}_{2}$, and SiO${}_{2}$ and MoS${}_{2}$ and SiO${}_{2}$, using scanning photoelectron microscopy. Negative shifts of both core levels and valence bands toward the Fermi energy have been observed. In connection with first-principles calculations, we have confirmed that the direct gap of single-layer MoS${}_{2}$ is changed to an indirect gap by stacking additional layers via van der Waals interlayer interactions.
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Cites
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Kim, S., Konar, A., Hwang, W.-S., Lee, J. H., Lee, J., Yang, J., Jung, C., Kim, H., Yoo, J.-B., Choi, J.-Y., et al. (2012) · Nature Communications · doi:10.1038/ncomms2018 · Cited by 1,636
Self-citation(2012) · doi:10.1103/physrevb.85.033305 · Cited by 1,307
Phonon-limited mobility inn-type single-layer MoS2from first principles
Kaasbjerg, K., Thygesen, K. S., & Jacobsen, K. W. (2012) · Physical Review B · doi:10.1103/physrevb.85.115317 · Cited by 1,295
Liu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Scalise, E., Houssa, M., Pourtois, G., Afanas’ev, V., & Stesmans, A. (2012) · Nano Research · doi:10.1007/s12274-011-0183-0 · Cited by 686
Metadata
- Authors
- Han, S. W., Kwon, H., Kim, S. K., Ryu, S., Yun, W. S., Kim, D. H., Hwang, J. H., Kang, J.-S., Baik, J., Shin, H. J., & Hong, S. C.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2011-07-06
- Volume
- 84
- Issue
- 4
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2040638053
- Cited by
- 382
- References
- 1
- FWCI
- 13.01
- Type
- journal article
- Language
- en
- Open access
- closed
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