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Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
Abstract
Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS${}_{2}$, MoSe${}_{2}$, WS${}_{2}$, and WSe${}_{2}$. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148--456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.
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Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
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Cited by
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Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
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Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Band offsets and heterostructures of two-dimensional semiconductors
Kang, J., Tongay, S., Zhou, J., Li, J., & Wu, J. (2013) · Applied Physics Letters · doi:10.1063/1.4774090 · Cited by 1,708
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Metadata
- Authors
- Zhu, Z. Y., Cheng, Y. C., & Schwingenschlögl, U.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2011-10-14
- Volume
- 84
- Issue
- 15
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W1967596824
- Cited by
- 1,675
- References
- 2
- FWCI
- 27.58
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhu, Z. Y., Cheng, Y. C., & Schwingenschlögl, U. (2011). Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Physical Review B. https://doi.org/10.1103/physrevb.84.153402
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