Cited by 196Topological Materials and PhenomenaSurface and Thin Film PhenomenaAdvanced Condensed Matter Physics

High-field Shubnikov–de Haas oscillations in the topological insulator Bi2Te2Se

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Xiong, Jun, Luo, Yongkang, Khoo, YueHaw, Jia, Shuang, Cava, R. J., Ong, N. P.·2012·Physical Review B

Abstract

We report measurements of the surface Shubnikov--de Haas oscillations (SdH) on crystals of the topological insulator Bi${}_{2}$Te${}_{2}$Se. In crystals with large bulk resistivity ($\ensuremath{\sim}4$ $\ensuremath{\Omega}\phantom{\rule{0.16em}{0ex}}$cm at 4 K), we observe $\ensuremath{\sim}15$ surface SdH oscillations (to the $n=1$ Landau level) in magnetic fields $B$ up to 45 T. Extrapolating to the limit $1/B\ensuremath{\rightarrow}0$, we confirm the $\frac{1}{2}$-shift expected from a Dirac spectrum. The results are consistent with a very small surface Land\'e $g$ factor.

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Crossref · 10.1103/physrevb.86.045314

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  • Quantum relaxation time and transport relaxation time are essentially different even though both arise from scattering by static impurities and defects.

    “While both arise from the scattering by static impurities and defects, these two quantities are essentially different (217, 218):”

    From Transport of Topological Semimetals (2019) · cites this paper as [217]

    Section V (p. 5) defines a lifetime through the Dingle temperature and uses it to estimate surface mobility, but does not distinguish quantum from transport relaxation time. Section III (p. 3) discusses defects and carrier density, not whether both times arise from scattering by static impurities and defects. Searches for the two relaxation times and scattering did not locate the attributed comparison. (LLM, conf=0.72)

    Experimental — accuracy not yet measured

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References 22 · Cited by 196

Research works printed but not linked: 1

  1. [24]L. M. Roth and P. N. Argyres, in Semiconductors and Semimetals, edited by R. K. Williardson and A. C. Beer (Academic Press, New York, 1966), Vol. 1.

Authors
Xiong, J., Luo, Y., Khoo, Y., Jia, S., Cava, R. J., & Ong, N. P.
Affiliations
Princeton University (US)
Venue
Physical Review B
Published
2012-07-17
Volume
86
Issue
4
ISSN
  • 1098-0121 (ISSN-L)
  • 1550-235X
OpenAlex
W2061208095
Cited by
196
References
22
Citations by year
2026: 7 · 2025: 7 · 2024: 6 · 2023: 4 · 2022: 8 · 2021: 15 · 2020: 17 · 2019: 18 · 2018: 21 · 2017: 19 · 2016: 13 · 2015: 20 · 2014: 21 · 2013: 14 · 2012: 6
FWCI
10.10
Type
journal article
Language
en
Open access
Locations
  • Physical Review B (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • arXiv (Cornell University)
Funders
National Science Foundation
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Surface and Thin Film Phenomena
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
Keywords
Shubnikov-de Haas oscillations, Bi2Te2Se, topological insulators, surface states, high magnetic fields, Dirac spectrum, Landé g-factor, volume resistivity, Landau levels

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