The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.
Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides
Open accessAbstract
Quantum conductance calculations on the mechanically deformed monolayers of MoS${}_{2}$ and WS${}_{2}$ were performed using the nonequlibrium Green's functions method combined with the Landauer-B\"uttiker approach for ballistic transport together with the density-functional-based tight binding method. Tensile strain causes significant changes in the electronic structure of transition-metal dichalcogenide single layers and eventually the semiconductor-metal transition occurs for elongations as large as 11$%$ for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials.
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Cites
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Cited by
Chang, C.-H., Fan, X., Lin, S.-H., & Kuo, J.-L. (2013) · Physical Review B · doi:10.1103/physrevb.88.195420 · Cited by 432
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties
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Metadata
- Authors
- Ghorbani-Asl, M., Borini, S., Kuc, A., & Heine, T.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2013-06-26
- Volume
- 87
- Issue
- 23
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2078371152
- Cited by
- 313
- References
- 34
- FWCI
- 12.14
- Type
- journal article
- Language
- en
- Open access
- green
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