Strong anisotropic anomalous Hall effect and spin Hall effect in the chiral antiferromagnetic compoundsMn3X(X=Ge, Sn, Ga, Ir, Rh, and Pt)

Abstract

We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds ${\mathrm{Mn}}_{3}X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by ab initio band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The ${\mathrm{Mn}}_{3}X$ materials exhibit a noncollinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We point out that ${\mathrm{Mn}}_{3}\mathrm{Ga}$ shows a large SHC of about 600 $(\ensuremath{\hbar}/e){(\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\text{cm})}^{\ensuremath{-}1}$. Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagnetic materials.