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Electron transport in nodal-line semimetals
Open accessAbstract
We study the electrical conductivity in a nodal-line semimetal with charged impurities. The screening of the Coulomb potential in this system is qualitatively different from what is found in conventional metals or semiconductors, with the screened potential $\ensuremath{\phi}$ decaying as $\ensuremath{\phi}\ensuremath{\propto}1/{r}^{2}$ over a wide interval of distances $r$. This unusual screening gives rise to a rich variety of conduction regimes as a function of temperature, doping level, and impurity concentration. In particular, nodal-line semimetals exhibit a diverging mobility $\ensuremath{\propto}1/|\ensuremath{\mu}|$ in the limit of vanishing chemical potential $\ensuremath{\mu}$, a linearly increasing dependence of the conductivity on temperature, $\ensuremath{\sigma}\ensuremath{\propto}T$, and a large weak-localization correction with a strongly anisotropic dependence on magnetic field.
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Nodal line semimetals are expected to have particular transport properties including different conduction regimes as a function of temperature, doping, and impurity concentration, arising from a Coulomb interaction that falls as 1/r^2 over a large range in r and a weak-localization correction with strongly anisotropic dependence on magnetic field.
“Nodal line semimetals are expected to have particular transport properties including a number of different conduction regimes as a function of temperature, doping, and impurity concentration that arises from a Coulomb interaction that falls as 1 /r 2 over a large range in r and a weak-localization correction with a strongly anisotropic dependence on magnetic field (Syzranov and Skinner, 2017).”
From Weyl and Dirac semimetals in three-dimensional solids (2018) · cites this paper as Syzranov and Skinner, 2017
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References 39 · Cited by 45
Research works printed but not linked: 29
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Metadata
- Authors
- Syzranov, S. V., & Skinner, B.
- Affiliations
- University of California, Santa Cruz (US)
- Massachusetts Institute of Technology (US)
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2017-10-11
- Volume
- 96
- Issue
- 16
- ISSN
- 2469-9950 (ISSN-L)
- 2469-9969
- OpenAlex
- W2561488828
- Cited by
- 45
- References
- 39
- Citations by year
- 2026: 5 · 2025: 2 · 2024: 11 · 2023: 3 · 2022: 7 · 2021: 4 · 2020: 9 · 2019: 1 · 2018: 2 · 2017: 1
- FWCI
- 1.74
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Licence
- Locations
- Physical review. B./Physical review. B (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- DSpace@MIT (Massachusetts Institute of Technology) (submittedVersion, cc-by-nc)
- arXiv (Cornell University)
- Funders
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- U.S. Department of Energy (DE-SC0001088)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Physics of Superconductivity and Magnetism
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- nodal-line semimetals, electron transport, electrical conductivity, charged impurities, screened potential, temperature dependence of conductivity, weak localization, impurity concentration, doping
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