The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Defect-Induced Intrinsic Magnetism in Wide-Gap III Nitrides
Abstract
Cation-vacancy induced intrinsic magnetism in GaN and BN is investigated by employing density-functional theory based electronic structure methods. The strong localization of defect states favors spontaneous spin polarization and local moment formation. A neutral cation vacancy in GaN or BN leads to the formation of a net moment of 3 muB with a spin-polarization energy of about 0.5 eV at the low density limit. The extended tails of defect wave functions, on the other hand, mediate surprisingly long-range magnetic interactions between the defect-induced moments. This duality of defect states suggests the existence of defect-induced or mediated collective magnetism in these otherwise nonmagnetic sp systems.
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Makarova, T. L., Sundqvist, B., Höhne, R., Esquinazi, P., Kopelevich, Y., Scharff, P., Davydov, V. A., Kashevarova, L. S., & Rakhmanina, A. V. (2001) · Nature · doi:10.1038/35099527 · Cited by 544
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Ferromagnetism in Semihydrogenated Graphene Sheet
Zhou, J., Wang, Q., Sun, Q., Chen, X. S., Kawazoe, Y., & Jena, P. (2009) · Nano Letters · doi:10.1021/nl9020733 · Cited by 849
Metadata
- Authors
- Dev, P., Xue, Y., & Zhang, P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2008-03-19
- Volume
- 100
- Issue
- 11
- Pages
- 117204-117204
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2318202428
- Cited by
- 350
- References
- 1
- FWCI
- 28.92
- Type
- journal article
- Language
- en
- Open access
- closed
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- Dev, P., Xue, Y., & Zhang, P. (2008). Defect-Induced Intrinsic Magnetism in Wide-Gap III Nitrides. Physical Review Letters. https://doi.org/10.1103/physrevlett.100.117204
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