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Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
Open accessAbstract
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with ${I}_{\mathrm{on}}/{I}_{\mathrm{off}}$ ratio up to ${10}^{6}$ and on-state current density as high as $\ensuremath{\sim}2000\text{ }\text{ }\ensuremath{\mu}\mathrm{A}/\ensuremath{\mu}\mathrm{m}$. We estimated carrier mobility $\ensuremath{\sim}200\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$ and scattering mean free path $\ensuremath{\sim}10\text{ }\text{ }\mathrm{nm}$ in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter ($d\ensuremath{\le}\ensuremath{\sim}1.2\text{ }\text{ }\mathrm{nm}$) carbon nanotube FETs with Pd contacts in on-state current density and ${I}_{\mathrm{on}}/{I}_{\mathrm{off}}$ ratio, but have the advantage of producing all-semiconducting devices.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Cited by
Narrow graphene nanoribbons from carbon nanotubes
Jiao, L., Zhang, L., Wang, X., Diankov, G., & Dai, H. (2009) · Nature · doi:10.1038/nature07919 · Cited by 2,441
Self-citationZeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Two-dimensional halide perovskite nanomaterials and heterostructures
Shi, E., Gao, Y., Finkenauer, B. P., Akriti, A., Coffey, A. H., & Dou, L. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00886d · Cited by 445
Energy Gaps in Etched Graphene Nanoribbons
Stampfer, C., Güttinger, J., Hellmüller, S., Molitor, F., Ensslin, K., & Ihn, T. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.056403 · Cited by 433
Electronic states of graphene nanoribbons and analytical solutions
Wakabayashi, K., Sasaki, K.-I., Nakanishi, T., & Enoki, T. (2010) · Science and Technology of Advanced Materials · doi:10.1088/1468-6996/11/5/054504 · Cited by 420
Metadata
- Authors
- Wang, X., Ouyang, Y., Li, X., Wang, H., Guo, J., & Dai, H.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2008-05-20
- Volume
- 100
- Issue
- 20
- Pages
- 206803-206803
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2045416062
- Cited by
- 1,485
- References
- 4
- FWCI
- 75.78
- Type
- journal article
- Language
- en
- Open access
- green
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- Wang, X., Ouyang, Y., Li, X., Wang, H., Guo, J., & Dai, H. (2008). Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors. Physical Review Letters. https://doi.org/10.1103/physrevlett.100.206803
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