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Epitaxial-Graphene/Graphene-Oxide Junction: An Essential Step towards Epitaxial Graphene Electronics
Open accessAbstract
Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.
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Cites
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
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Metadata
- Authors
- Wu, X., Sprinkle, M., Li, X., Ming, F., Berger, C., & de Heer, W. A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2008-07-07
- Volume
- 101
- Issue
- 2
- Pages
- 026801-026801
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2073853653
- Cited by
- 319
- References
- 1
- FWCI
- 15.83
- Type
- journal article
- Language
- en
- Open access
- green
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- Wu, X., Sprinkle, M., Li, X., Ming, F., Berger, C., & de Heer, W. A. (2008). Epitaxial-Graphene/Graphene-Oxide Junction: An Essential Step towards Epitaxial Graphene Electronics. Physical Review Letters. https://doi.org/10.1103/physrevlett.101.026801
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