The DOI matches its Crossref record; 17 of the 17 references it cites were found in a registry or an index.
Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium
Open accessAbstract
The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison with bulk crystalline Si. However, nanosize interfaces are not as effective as point defects in scattering phonons with wavelengths shorter than 1 nm. We further found that a 5 at. % Ge replacing Si is very efficient in scattering phonons shorter than 1 nm, resulting in a further thermal conductivity reduction by a factor of 2, thereby leading to a thermoelectric figure of merit 0.95 for Si95Ge5, similar to that of large grained Si80Ge20 alloys.
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Self-citationThin-film thermoelectric devices with high room-temperature figures of merit
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Cited by
High-performance bulk thermoelectrics with all-scale hierarchical architectures
Biswas, K., He, J., Blum, I. D., Wu, C.-I., Hogan, T. P., Seidman, D. N., Dravid, V. P., & Kanatzidis, M. G. (2012) · Nature · doi:10.1038/nature11439 · Cited by 4,740
Experimental Studies on Anisotropic Thermoelectric Properties and Structures of n-Type Bi2Te2.7Se0.3
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Self-citationNonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications
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Metadata
- Authors
- Zhu, G. H., Lee, H., Lan, Y. C., Wang, X. W., Joshi, G., Wang, D. Z., Yang, J., Vashaee, D., Guilbert, H., Pillitteri, A., Dresselhaus, M. S., Chen, G., & Ren, Z. F.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2009-05-14
- Volume
- 102
- Issue
- 19
- Pages
- 196803-196803
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1987675027
- Cited by
- 302
- References
- 17
- FWCI
- 9.25
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Zhu, G. H., Lee, H., Lan, Y. C., Wang, X. W., Joshi, G., Wang, D. Z., Yang, J., Vashaee, D., Guilbert, H., Pillitteri, A., Dresselhaus, M. S., Chen, G., & Ren, Z. F. (2009). Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium. Physical Review Letters. https://doi.org/10.1103/physrevlett.102.196803
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