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Cited by 399

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Transition between Electron Localization and Antilocalization in Graphene

Open access
Tikhonenko, F. V., Kozikov, A. A., Savchenko, A. K., Gorbachev, R. V.·2009·Physical Review Letters

Abstract

We show that quantum interference in graphene can result in antilocalization of charge carriers--an increase of the conductance, which is detected by a negative magnetoconductance. We demonstrate that depending on experimental conditions one can observe either weak localization or antilocalization of carriers in graphene. A transition from localization to antilocalization occurs when the carrier density is decreased and the temperature is increased. We show that quantum interference in graphene can survive at high temperatures, up to T approximately 200 K, due to weak electron-phonon scattering.

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Metadata

Authors
Tikhonenko, F. V., Kozikov, A. A., Savchenko, A. K., & Gorbachev, R. V.
Venue
Physical Review Letters
Published
2009-11-23
Volume
103
Issue
22
Pages
226801-226801
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2147069884
Cited by
399
References
1
FWCI
14.52
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Transition between Electron Localization and Antilocalization in Graphene. https://app.cochat.ai/papers/10.1103/physrevlett.103.226801
The paper
Tikhonenko, F. V., Kozikov, A. A., Savchenko, A. K., & Gorbachev, R. V. (2009). Transition between Electron Localization and Antilocalization in Graphene. Physical Review Letters. https://doi.org/10.1103/physrevlett.103.226801

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.