The DOI matches its Crossref record.
Dominant Mobility Modulation by the Electric Field Effect at theLaAlO3/SrTiO3Interface
Open accessAbstract
Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO3/SrTiO3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost 5 times that of the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.
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Citations
Cited by
A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface
Joshua, A., Pecker, S., Ruhman, J., Altman, E., & Ilani, S. (2012) · Nature Communications · doi:10.1038/ncomms2116 · Cited by 344
Fête, A., Gariglio, S., Berthod, C., Li, D., Stornaiuolo, D., Gabay, M., & Triscone, J.-M. (2014) · New Journal of Physics · doi:10.1088/1367-2630/16/11/112002 · Cited by 56
Metadata
- Authors
- Bell, C., Harashima, S., Kozuka, Y., Kim, M., Kim, B. G., Hikita, Y., & Hwang, H. Y.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2009-11-24
- Volume
- 103
- Issue
- 22
- Pages
- 226802-226802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2016787487
- Cited by
- 280
- References
- 0
- FWCI
- 7.82
- Type
- journal article
- Language
- en
- Open access
- green
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- Bell, C., Harashima, S., Kozuka, Y., Kim, M., Kim, B. G., Hikita, Y., & Hwang, H. Y. (2009). Dominant Mobility Modulation by the Electric Field Effect at theLaAlO3/SrTiO3Interface. Physical Review Letters. https://doi.org/10.1103/physrevlett.103.226802
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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