The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Migration and Localization of Metal Atoms on Strained Graphene
Open accessAbstract
Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted π-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.
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Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Cited by
Structural Defects in Graphene
Banhart, F., Kotakoski, J., & Krasheninnikov, A. V. (2011) · ACS Nano · doi:10.1021/nn102598m · Cited by 3,340
Self-citationAnchoring zero valence single atoms of nickel and iron on graphdiyne for hydrogen evolution
Xue, Y., Huang, B., Yi, Y., Guo, Y., Zuo, Z., Li, Y., Jia, Z., Liu, H., & Li, Y. (2018) · Nature Communications · doi:10.1038/s41467-018-03896-4 · Cited by 1,011
Metadata
- Authors
- Cretu, O., Krasheninnikov, A. V., Rodríguez-Manzo, J. A., Sun, L., Nieminen, R. M., & Banhart, F.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2010-11-05
- Volume
- 105
- Issue
- 19
- Pages
- 196102-196102
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2028627683
- Cited by
- 334
- References
- 2
- FWCI
- 13.44
- Type
- journal article
- Language
- en
- Open access
- green
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