The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well
Open accessAbstract
Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.
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Cites
Topological insulators and superconductors
Qi, X.-L., & Zhang, S.-C. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.1057 · Cited by 14,394
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
Bernevig, B. A., Hughes, T. L., & Zhang, S.-C. (2006) · Science · doi:10.1126/science.1133734 · Cited by 7,090
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009) · Nature Physics · doi:10.1038/nphys1270 · Cited by 6,359
Quantum Spin Hall Insulator State in HgTe Quantum Wells
König, M., Wiedmann, S., Brüne, C., Roth, A., Buhmann, H., Molenkamp, L. W., Qi, X.-L., & Zhang, S.-C. (2007) · Science · doi:10.1126/science.1148047 · Cited by 6,151
A topological Dirac insulator in a quantum spin Hall phase
Hsieh, D., Qian, D., Wray, L., Xia, Y., Hor, Y. S., Cava, R. J., & Hasan, M. Z. (2008) · Nature · doi:10.1038/nature06843 · Cited by 3,523
Spin—Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
Winkler, R. (2003) · Springer Tracts in Modern Physics · doi:10.1007/b13586 · Cited by 2,489
Tunable multifunctional topological insulators in ternary Heusler compounds
Chadov, S., Qi, X., Kübler, J., Fecher, G. H., Felser, C., & Zhang, S. C. (2010) · Nature Materials · doi:10.1038/nmat2770 · Cited by 927
Lin, H., Wray, L. A., Xia, Y., Xu, S., Jia, S., Cava, R. J., Bansil, A., & Hasan, M. Z. (2010) · Nature Materials · doi:10.1038/nmat2771 · Cited by 736
Cited by
Liu, Q., Zhang, X., Abdalla, L. B., Fazzio, A., & Zunger, A. (2015) · Nano Letters · doi:10.1021/nl5043769 · Cited by 485
Metadata
- Authors
- Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., & Chang, K.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2012-11-02
- Volume
- 109
- Issue
- 18
- Pages
- 186803-186803
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1979691569
- Cited by
- 177
- References
- 8
- FWCI
- 5.98
- Type
- journal article
- Language
- en
- Open access
- green
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- Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., & Chang, K. (2012). Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well. Physical Review Letters. https://doi.org/10.1103/physrevlett.109.186803
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