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Cited by 186

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Relative Refractory Period in an Excitable Semiconductor Laser

Selmi, F., Braive, R., Beaudoin, G., Sagnes, I., Kuszelewicz, R., Barbay, S.·2014·Physical Review Letters

Abstract

We report on experimental evidence of neuronlike excitable behavior in a micropillar laser with saturable absorber. We show that under a single pulsed perturbation the system exhibits subnanosecond response pulses and analyze the role of the laser bias pumping. Under a double pulsed excitation we study the absolute and relative refractory periods, similarly to what can be found in neural excitability, and interpret the results in terms of a dynamical inhibition mediated by the carrier dynamics. These measurements shed light on the analogy between optical and biological neurons and pave the way to fast spike-time coding based optical systems with a speed several orders of magnitude faster than their biological or electronic counterparts.

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Metadata

Authors
Selmi, F., Braive, R., Beaudoin, G., Sagnes, I., Kuszelewicz, R., & Barbay, S.
Venue
Physical Review Letters
Published
2014-05-07
Volume
112
Issue
18
Pages
183902-183902
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2334884940
Cited by
186
References
1
FWCI
8.14
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Relative Refractory Period in an Excitable Semiconductor Laser. https://app.cochat.ai/papers/10.1103/physrevlett.112.183902
The paper
Selmi, F., Braive, R., Beaudoin, G., Sagnes, I., Kuszelewicz, R., & Barbay, S. (2014). Relative Refractory Period in an Excitable Semiconductor Laser. Physical Review Letters. https://doi.org/10.1103/physrevlett.112.183902

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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