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Cited by 218

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

Open access
Falk, Abram L., Klimov, Paul V., Buckley, Bob B., Ivády, Viktor, Abrikosov, Igor A., Calusine, Greg, Koehl, William F., Gali, Ádám, Awschalom, David D.·2014·Physical Review Letters

Abstract

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.

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Crossref · 10.1103/physrevlett.112.187601

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Metadata

Authors
Falk, A. L., Klimov, P. V., Buckley, B. B., Ivády, V., Abrikosov, I. A., Calusine, G., Koehl, W. F., Gali, Á., & Awschalom, D. D.
Venue
Physical Review Letters
Published
2014-05-05
Volume
112
Issue
18
Pages
187601-187601
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2035088627
Cited by
218
References
1
FWCI
7.89
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers. https://app.cochat.ai/papers/10.1103/physrevlett.112.187601
The paper
Falk, A. L., Klimov, P. V., Buckley, B. B., Ivády, V., Abrikosov, I. A., Calusine, G., Koehl, W. F., Gali, Á., & Awschalom, D. D. (2014). Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers. Physical Review Letters. https://doi.org/10.1103/physrevlett.112.187601

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