The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Ab Initio Study of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon
Abstract
Hot carrier thermalization is a major source of efficiency loss in solar cells. Because of the subpicosecond time scale and complex physics involved, a microscopic characterization of hot carriers is challenging even for the simplest materials. We develop and apply an ab initio approach based on density functional theory and many-body perturbation theory to investigate hot carriers in semiconductors. Our calculations include electron-electron and electron-phonon interactions, and require no experimental input other than the structure of the material. We apply our approach to study the relaxation time and mean free path of hot carriers in Si, and map the band and k dependence of these quantities. We demonstrate that a hot carrier distribution characteristic of Si under solar illumination thermalizes within 350 fs, in excellent agreement with pump-probe experiments. Our work sheds light on the subpicosecond time scale after sunlight absorption in Si, and constitutes a first step towards ab initio quantification of hot carrier dynamics in materials.
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Cited by
Theory and computation of hot carriers generated by surface plasmon polaritons in noble metals
Bernardi, M., Mustafa, J., Neaton, J. B., & Louie, S. G. (2015) · Nature Communications · doi:10.1038/ncomms8044 · Cited by 438
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Metadata
- Authors
- Bernardi, M., Vigil-Fowler, D., Lischner, J., Neaton, J. B., & Louie, S. G.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2014-06-26
- Volume
- 112
- Issue
- 25
- Pages
- 257402-257402
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2135206031
- Cited by
- 264
- References
- 29
- FWCI
- 12.73
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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