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Topologically Robust Transport of Photons in a Synthetic Gauge Field
Open accessAbstract
Electronic transport is localized in low-dimensional disordered media. The addition of gauge fields to disordered media leads to fundamental changes in the transport properties. We implement a synthetic gauge field for photons using silicon-on-insulator technology. By determining the distribution of transport properties, we confirm that waves are localized in the bulk and localization is suppressed in edge states. Our system provides a new platform for investigating the transport properties of photons in the presence of synthetic gauge fields.
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Cites
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Cited by
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Metadata
- Authors
- Mittal, S., Fan, J., Faez, S., Migdall, A., Taylor, J. M., & Hafezi, M.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2014-08-20
- Volume
- 113
- Issue
- 8
- Pages
- 087403-087403
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2048097905
- Cited by
- 284
- References
- 8
- FWCI
- 13.31
- Type
- journal article
- Language
- en
- Open access
- bronze
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