The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Robust Helical Edge Transport in GatedInAs/GaSbBilayers
Open accessAbstract
We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e^{2}/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12 T applied in-plane field; the conductance increases from 2e^{2}/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.
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Cites
Colloquium : Topological insulators
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Z 2 Topological Order and the Quantum Spin Hall Effect
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Quantum Spin Hall Insulator State in HgTe Quantum Wells
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Cited by
Colloquium : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587
Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal
Wu, S., Fatemi, V., Gibson, Q. D., Watanabe, K., Taniguchi, T., Cava, R. J., & Jarillo-Herrero, P. (2018) · Science · doi:10.1126/science.aan6003 · Cited by 851
Edge conduction in monolayer WTe2
Fei, Z., Palomaki, T., Wu, S., Zhao, W., Cai, X., Sun, B., Nguyen, P., Finney, J., Xu, X., & Cobden, D. H. (2017) · Nature Physics · doi:10.1038/nphys4091 · Cited by 617
Kou, X., Fan, Y., & Wang, K. L. (2019) · Journal of Physics and Chemistry of Solids · doi:10.1016/j.jpcs.2017.10.016 · Cited by 13
Metadata
- Authors
- Du, L., Knez, I., Sullivan, G., & Du, R.-R.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2015-03-04
- Volume
- 114
- Issue
- 9
- Pages
- 096802-096802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2243334116
- Cited by
- 422
- References
- 30
- FWCI
- 32.27
- Type
- journal article
- Language
- en
- Open access
- green
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- Du, L., Knez, I., Sullivan, G., & Du, R.-R. (2015). Robust Helical Edge Transport in GatedInAs/GaSbBilayers. Physical Review Letters. https://doi.org/10.1103/physrevlett.114.096802
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
