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Many-Particle Effects in the Optical Excitations of a Semiconductor

Hanke, W., Sham, L. J.·1979·Physical Review Letters

Abstract

We present (a) a general formulation of the electron-hole interaction which takes into account both screened electron-hole attraction and its exchange counterpart, giving rise to the excitonic and local-field effects, respectively; (b) a quantitative calculation of absorption and modulation spectrum in Si, which demonstrates the dominant role played by the continuum-exciton effect on the main optical absorption of a covalent semiconductor; and (c) a model analysis of the continuum-excitonic effect on the optical excitations of semiconductors in general.

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Metadata

Authors
Hanke, W., & Sham, L. J.
Venue
Physical Review Letters
Published
1979-07-30
Volume
43
Issue
5
Pages
387-390
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2018244947
Cited by
262
References
0
FWCI
7.79
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Many-Particle Effects in the Optical Excitations of a Semiconductor. https://app.cochat.ai/papers/10.1103/physrevlett.43.387
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Hanke, W., & Sham, L. J. (1979). Many-Particle Effects in the Optical Excitations of a Semiconductor. Physical Review Letters. https://doi.org/10.1103/physrevlett.43.387

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