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Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
Abstract
We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111> is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.
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Cited by
Advances in the Casimir Effect
Bordag, M., Klimchitskaya, G. L., Mohideen, U., & Mostepanenko, V. M. (2009) · doi:10.1093/acprof:oso/9780199238743.001.0001 · Cited by 1,284
Metadata
- Authors
- Yablonovitch, E., Allara, D. L., Chang, C. C., Gmitter, T., & Bright, T. B.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1986-07-14
- Volume
- 57
- Issue
- 2
- Pages
- 249-252
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2026854929
- Cited by
- 959
- References
- 0
- FWCI
- 23.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces. https://app.cochat.ai/papers/10.1103/physrevlett.57.249
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- Yablonovitch, E., Allara, D. L., Chang, C. C., Gmitter, T., & Bright, T. B. (1986). Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces. Physical Review Letters. https://doi.org/10.1103/physrevlett.57.249
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