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Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

Kakalios, J., Street, R. A., Jackson, W. B.·1987·Physical Review Letters

Abstract

In this paper we find that the stretched-exponential relaxation commonly observed in disordered systems is explained by time-dependent atomic diffusion. The relaxation is observed in the electronic properties of hydrogenated amorphous silicon (a-Si:H), a ``hydrogen glass'' material, and reflects the equlibration of localized electronic states. The relaxation is attributed to the motion of bonded hydrogen which exhibits dispersive diffusion with a characteristic power-law time dependence. A quantitative relation between the relaxation and the diffusion is established.

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Metadata

Authors
Kakalios, J., Street, R. A., & Jackson, W. B.
Venue
Physical Review Letters
Published
1987-08-31
Volume
59
Issue
9
Pages
1037-1040
ISSN
0031-9007 (ISSN-L)
OpenAlex
W1968759897
Cited by
621
References
0
FWCI
35.75
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. https://app.cochat.ai/papers/10.1103/physrevlett.59.1037
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Kakalios, J., Street, R. A., & Jackson, W. B. (1987). Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. Physical Review Letters. https://doi.org/10.1103/physrevlett.59.1037

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