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Stabilities of single-layer and bilayer steps on Si(001) surfaces
Abstract
The formation energies of single- and double-layer steps on Si(001) surfaces were calculated. For each case, two configurations with surface dimerization axes normal or parallel to the step edge were examined. Single-layer steps are found to have the lowest formation energy. Bilayer steps become energetically more favorable on surfaces misoriented towards [110] or [1\ifmmode\bar\else\textasciimacron\fi{}10] axes where low- and high-energy single-layer steps are forced to alternate with each other.
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Citations
Cited by
Steps on surfaces: experiment and theory
Jeong, H.-C., & Williams, E. D. (1999) · Surface Science Reports · doi:10.1016/s0167-5729(98)00010-7 · Cited by 722
Self-organization of nanostructures in semiconductor heteroepitaxy
Teichert, C. (2002) · Physics Reports · doi:10.1016/s0370-1573(02)00009-1 · Cited by 462
GaP-nucleation on exact Si (001) substrates for III/V device integration
Volz, K., Beyer, A., Witte, W., Ohlmann, J., Németh, I., Kunert, B., & Stolz, W. (2011) · Journal of Crystal Growth · doi:10.1016/j.jcrysgro.2010.10.036 · Cited by 351
THERMODYNAMICS OF NUCLEATION AND GROWTH
TROMP, R. M., & HANNON, J. B. (2002) · Surface Review and Letters · doi:10.1142/s0218625x02003846 · Cited by 80
Metadata
- Authors
- Chadi, D. J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1987-10-12
- Volume
- 59
- Issue
- 15
- Pages
- 1691-1694
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2025388210
- Cited by
- 901
- References
- 0
- FWCI
- 16.79
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chadi, D. J. (1987). Stabilities of single-layer and bilayer steps on Si(001) surfaces. Physical Review Letters. https://doi.org/10.1103/physrevlett.59.1691
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