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Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field
Abstract
We have observed that a strong electric field $\mathcal{E}$ shifts to higher energies the photoluminescence and photocurrent peaks of a GaAs-${\mathrm{Ga}}_{0.65}$${\mathrm{Al}}_{0.35}$As superlattice of period $D$ (=65 \AA{}), which we explain by a field-induced localization of carriers to isolated quantum wells. Good agreement is found between observed and calculated shifts when the large field-induced increase of the exciton binding energy is taken into account. At moderate fields [\ensuremath{\cong}(2-3)\ifmmode\times\else\texttimes\fi{}${10}^{4}$ V/cm], the coupling between adjacent wells is manifested by four additional peaks that shift at the rates $\ifmmode\pm\else\textpm\fi{}e\mathcal{E}D$ and $\ifmmode\pm\else\textpm\fi{}2e\mathcal{E}D$ and correspond to transitions that involve different levels of the Stark ladder.
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Cited by
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Feldmann, J., Leo, K., Shah, J., Miller, D. A. B., Cunningham, J. E., Meier, T., von Plessen, G., Schulze, A., Thomas, P., & Schmitt-Rink, S. (1992) · Physical Review B · doi:10.1103/physrevb.46.7252 · Cited by 586
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Sapienza, R., Costantino, P., Wiersma, D., Ghulinyan, M., Oton, C. J., & Pavesi, L. (2003) · Physical Review Letters · doi:10.1103/physrevlett.91.263902 · Cited by 265
Metadata
- Authors
- Mendez, E. E., Agulló-Rueda, F., & Hong, J. M.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1988-06-06
- Volume
- 60
- Issue
- 23
- Pages
- 2426-2429
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2055069633
- Cited by
- 891
- References
- 0
- FWCI
- 36.81
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mendez, E. E., Agulló-Rueda, F., & Hong, J. M. (1988). Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field. Physical Review Letters. https://doi.org/10.1103/physrevlett.60.2426
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