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Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field

Mendez, E. E., Agulló-Rueda, F., Hong, J. M.·1988·Physical Review Letters

Abstract

We have observed that a strong electric field $\mathcal{E}$ shifts to higher energies the photoluminescence and photocurrent peaks of a GaAs-${\mathrm{Ga}}_{0.65}$${\mathrm{Al}}_{0.35}$As superlattice of period $D$ (=65 \AA{}), which we explain by a field-induced localization of carriers to isolated quantum wells. Good agreement is found between observed and calculated shifts when the large field-induced increase of the exciton binding energy is taken into account. At moderate fields [\ensuremath{\cong}(2-3)\ifmmode\times\else\texttimes\fi{}${10}^{4}$ V/cm], the coupling between adjacent wells is manifested by four additional peaks that shift at the rates $\ifmmode\pm\else\textpm\fi{}e\mathcal{E}D$ and $\ifmmode\pm\else\textpm\fi{}2e\mathcal{E}D$ and correspond to transitions that involve different levels of the Stark ladder.

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Metadata

Authors
Mendez, E. E., Agulló-Rueda, F., & Hong, J. M.
Venue
Physical Review Letters
Published
1988-06-06
Volume
60
Issue
23
Pages
2426-2429
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2055069633
Cited by
891
References
0
FWCI
36.81
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field. https://app.cochat.ai/papers/10.1103/physrevlett.60.2426
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Mendez, E. E., Agulló-Rueda, F., & Hong, J. M. (1988). Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field. Physical Review Letters. https://doi.org/10.1103/physrevlett.60.2426

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