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Inhibited and Enhanced Spontaneous Emission from Optically Thin AlGaAs/GaAs Double Heterostructures
Abstract
Inhibited spontaneous emission in atomic physics has been intensively investigated recently. In solid-state physics these effects are no less important. We have studied the spontaneous emission of light from electron-hole recombination in optically thin GaAs double heterostructures. The electron-hole radiative recombination rate coefficient $B$ is not purely a property of the GaAs itself, but depends strongly on the optical-mode density and refractive index of the medium in which it is immersed. The spontaneous-emission rate can be markedly increased or decreased depending on whether the surrounding refractive index is higher or lower than that of GaAs.
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Citations
Cited by
Physics and Device Applications of Optical Microcavities
Yokoyama, H. (1992) · Science · doi:10.1126/science.256.5053.66 · Cited by 409
Vallée, R. A. L., Van Der Auweraer, M., De Schryver, F. C., Beljonne, D., & Orrit, M. (2005) · ChemPhysChem · doi:10.1002/cphc.200400439 · Cited by 59
Metadata
- Authors
- Yablonovitch, E., Gmitter, T. J., & Bhat, R.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1988-11-28
- Volume
- 61
- Issue
- 22
- Pages
- 2546-2549
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2003163391
- Cited by
- 330
- References
- 0
- FWCI
- 5.39
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yablonovitch, E., Gmitter, T. J., & Bhat, R. (1988). Inhibited and Enhanced Spontaneous Emission from Optically Thin AlGaAs/GaAs Double Heterostructures. Physical Review Letters. https://doi.org/10.1103/physrevlett.61.2546
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