The DOI matches its Crossref record.
Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
Abstract
We calculate absolute formation energies of native defects in GaAs. The formation energy and hence the equilibrium concentration of the defects depends strongly on the atomic chemical potentials of As and Ga as well as the electron chemical potential. For example, the Ga vacancy concentration changes by more than ten orders of magnitude as the chemical potentials of As and Ga vary over the thermodynamically allowed range. This result indicates that the rate of self-diffusion depends strongly on the surface-annealing conditions.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Lany, S., & Zunger, A. (2008) · Physical Review B · doi:10.1103/physrevb.78.235104 · Cited by 1,257
Self-Purification in Semiconductor Nanocrystals
Dalpian, G. M., & Chelikowsky, J. R. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.226802 · Cited by 678
Barouh, C., Schuler, T., Fu, C.-C., & Nastar, M. (2014) · Physical Review B · doi:10.1103/physrevb.90.054112 · Cited by 108
First-principles study of oxygen-deficientLaNiO3structures
Malashevich, A., & Ismail-Beigi, S. (2015) · Physical Review B · doi:10.1103/physrevb.92.144102 · Cited by 52
Metadata
- Authors
- Zhang, S., & Northrup, J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1991-10
- Volume
- 67
- Issue
- 17
- Pages
- 2339-2342
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W1990393409
- Cited by
- 1,791
- References
- 0
- FWCI
- 7.31
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion. https://app.cochat.ai/papers/10.1103/physrevlett.67.2339
- The paper
- Zhang, S., & Northrup, J. (1991). Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion. Physical Review Letters. https://doi.org/10.1103/physrevlett.67.2339
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
