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Theory of self-diffusion at and growth of Al(111)

Stumpf, Roland, Scheffler, Matthias·1994·Physical Review Letters

Abstract

We studied the self-diffusion at clean, flat as well as stepped Al(111) surfaces using density-functional theory. There are two important steps on fcc(111) surfaces, typically labeled according to their {111} and {100} microfacets. We calculated the formation energies of these steps, and analyzed the diffusion perpendicular and parallel to them. We discuss the general profile of the diffusing-atom potential-energy surface and identify the role of ``normal'' hopping and exchange mechanisms of diffusion at steps. From these results the equilibrium shape of islands and the temperature dependence of the island shapes under growth conditions are predicted.

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Metadata

Authors
Stumpf, R., & Scheffler, M.
Venue
Physical Review Letters
Published
1994-01-10
Volume
72
Issue
2
Pages
254-257
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2016512473
Cited by
232
References
0
FWCI
21.98
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Theory of self-diffusion at and growth of Al(111). https://app.cochat.ai/papers/10.1103/physrevlett.72.254
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Stumpf, R., & Scheffler, M. (1994). Theory of self-diffusion at and growth of Al(111). Physical Review Letters. https://doi.org/10.1103/physrevlett.72.254

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