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Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

Marzin, J. -Y., Gérard, J. -M., Izraël, A., Barrier, D., Bastard, G.·1994·Physical Review Letters

Abstract

We present photoluminescence data on InAs quantum dots grown by molecular beam epitaxy on GaAs. Through the reduction of the number of emitting dots in small mesa structures, we evidence narrow lines in the spectra, each associated with a single InAs dot. Beyond the statistical analysis allowed by this technique, our results indicate short capture and relaxation times into the dots. This approach opens the route towards the detailed optical study of high quality easily fabricated single semiconductor quantum dots.

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Metadata

Authors
Marzin, J. Y., Gérard, J. M., Izraël, A., Barrier, D., & Bastard, G.
Venue
Physical Review Letters
Published
1994-08-01
Volume
73
Issue
5
Pages
716-719
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2028539913
Cited by
1,153
References
0
FWCI
51.03
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs. https://app.cochat.ai/papers/10.1103/physrevlett.73.716
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Marzin, J. Y., Gérard, J. M., Izraël, A., Barrier, D., & Bastard, G. (1994). Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs. Physical Review Letters. https://doi.org/10.1103/physrevlett.73.716

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.