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Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
Abstract
Coherent InAs islands separated by GaAs spacer layers are shown to exhibit self-organized growth along the vertical (i.e., growth) direction. The driving force for such vertically self-organized growth is shown to be the interacting strain fields induced by the islands which give rise to a preferred direction for In migration. A model analysis accounting for the mechanochemical surface diffusion gives an island average size and average separation dependent characteristic spacer layer thickness ${z}_{0}$ below which a vertically self-organized growth occurs.
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Citations
Cited by
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Bayer, M., Hawrylak, P., Hinzer, K., Fafard, S., Korkusinski, M., Wasilewski, Z. R., Stern, O., & Forchel, A. (2001) · Science · doi:10.1126/science.291.5503.451 · Cited by 816
Structural properties of self-organized semiconductor nanostructures
Stangl, J., Holý, V., & Bauer, G. (2004) · Reviews of Modern Physics · doi:10.1103/revmodphys.76.725 · Cited by 801
Moriarty, P. (2001) · Reports on Progress in Physics · doi:10.1088/0034-4885/64/3/201 · Cited by 785
Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering
Renaud, G., Lazzari, R., & Leroy, F. (2009) · Surface Science Reports · doi:10.1016/j.surfrep.2009.07.002 · Cited by 756
Deterministic Coupling of Single Quantum Dots to Single Nanocavity Modes
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Metadata
- Authors
- Xie, Q., Madhukar, A., Chen, P., & Kobayashi, N. P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1995-09-25
- Volume
- 75
- Issue
- 13
- Pages
- 2542-2545
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2001205612
- Cited by
- 1,346
- References
- 0
- FWCI
- 37.83
- Type
- journal article
- Language
- en
- Open access
- closed
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- Xie, Q., Madhukar, A., Chen, P., & Kobayashi, N. P. (1995). Vertically Self-Organized InAs Quantum Box Islands on GaAs(100). Physical Review Letters. https://doi.org/10.1103/physrevlett.75.2542
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