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The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex

Goss, J. P., Jones, R., Breuer, S. J., Briddon, P. R., Öberg, S.·1996·Physical Review Letters

Abstract

Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.

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Metadata

Authors
Goss, J. P., Jones, R., Breuer, S. J., Briddon, P. R., & Öberg, S.
Venue
Physical Review Letters
Published
1996-09-30
Volume
77
Issue
14
Pages
3041-3044
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W1985489608
Cited by
308
References
0
FWCI
2.70
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex. https://app.cochat.ai/papers/10.1103/physrevlett.77.3041
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Goss, J. P., Jones, R., Breuer, S. J., Briddon, P. R., & Öberg, S. (1996). The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex. Physical Review Letters. https://doi.org/10.1103/physrevlett.77.3041

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