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Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

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Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, G., Delerue, C.·1999·Physical Review Letters

Abstract

Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to oxygen, the PL shifts to the red by as much as 1 eV. This shift and the changes in PL intensity and decay time, show that both quantum confinement and surface passivation determine the electronic states of silicon quantum dots. A theoretical model in which new electronic states appear in the band gap of the smaller quantum dots when a $\mathrm{Si}=\mathrm{O}$ bond is formed, is in good agreement with experiments. This result clarifies the controversy regarding the PL mechanisms in porous silicon.

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Metadata

Authors
Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, G., & Delerue, C.
Venue
Physical Review Letters
Published
1999-01-04
Volume
82
Issue
1
Pages
197-200
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2132493396
Cited by
1,946
References
0
FWCI
54.04
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen. https://app.cochat.ai/papers/10.1103/physrevlett.82.197
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Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, G., & Delerue, C. (1999). Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen. Physical Review Letters. https://doi.org/10.1103/physrevlett.82.197

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