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Hydrogen as a Cause of Doping in Zinc Oxide
Open accessAbstract
Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor. This behavior is unexpected and very different from hydrogen's role in other semiconductors, in which it acts only as a compensating center and always counteracts the prevailing conductivity. These insights have important consequences for control and utilization of hydrogen in oxides in general.
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Citations
Cites
Self-Consistent Equations Including Exchange and Correlation Effects
Kohn, W., & Sham, L. J. (1965) · Physical Review · doi:10.1103/physrev.140.a1133 · Cited by 64,135
Metadata
- Authors
- Van de Walle, C. G.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2000-07-31
- Volume
- 85
- Issue
- 5
- Pages
- 1012-1015
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1969619515
- Cited by
- 2,212
- References
- 1
- FWCI
- 29.73
- Type
- journal article
- Language
- en
- Open access
- green
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- Van de Walle, C. G. (2000). Hydrogen as a Cause of Doping in Zinc Oxide. Physical Review Letters. https://doi.org/10.1103/physrevlett.85.1012
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
