The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Metal-Semiconductor Nanocontacts: Silicon Nanowires
Abstract
Silicon nanowires assembled from clusters or etched from the bulk, connected to aluminum electrodes and passivated, are studied with large-scale local-density-functional simulations. Short ( approximately 0.6 nm) wires are fully metallized by metal-induced gap states resulting in finite conductance ( approximately e(2)/h). For longer wires ( approximately 2.5 nm) nanoscale Schottky barriers develop with heights larger than the corresponding bulk value by 40% to 90%. Electric transport requires doping dependent gate voltages with the conductance spectra exhibiting interference resonances due to scattering of ballistic channels by the contacts.
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Barnett, R. N., & Landman, U. (1993) · Physical Review B · doi:10.1103/physrevb.48.2081 · Cited by 629
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Cited by
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Popov, I., Seifert, G., & Tománek, D. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.156802 · Cited by 572
Hybrid Semiconductor–Metal Nanoparticles: From Architecture to Function
Banin, U., Ben-Shahar, Y., & Vinokurov, K. (2014) · Chemistry of Materials · doi:10.1021/cm402131n · Cited by 366
Metadata
- Authors
- Landman, U., Barnett, R. N., Scherbakov, A. G., & Avouris, P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2000-08-28
- Volume
- 85
- Issue
- 9
- Pages
- 1958-1961
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2015029228
- Cited by
- 194
- References
- 1
- FWCI
- 9.09
- Type
- journal article
- Language
- en
- Open access
- closed
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- Landman, U., Barnett, R. N., Scherbakov, A. G., & Avouris, P. (2000). Metal-Semiconductor Nanocontacts: Silicon Nanowires. Physical Review Letters. https://doi.org/10.1103/physrevlett.85.1958
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