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Carbon Nanotubes as Schottky Barrier Transistors
Open accessAbstract
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors," in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.
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Cited by
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Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028
Ballistic carbon nanotube field-effect transistors
Javey, A., Guo, J., Wang, Q., Lundstrom, M., & Dai, H. (2003) · Nature · doi:10.1038/nature01797 · Cited by 3,187
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Fowler, J. D., Allen, M. J., Tung, V. C., Yang, Y., Kaner, R. B., & Weiller, B. H. (2009) · ACS Nano · doi:10.1021/nn800593m · Cited by 1,447
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Self-citationElectrically Induced Optical Emission from a Carbon Nanotube FET
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Metadata
- Authors
- Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J., & Avouris, P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2002-08-15
- Volume
- 89
- Issue
- 10
- Pages
- 106801-106801
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1999421581
- Cited by
- 1,270
- References
- 0
- FWCI
- 54.75
- Type
- journal article
- Language
- en
- Open access
- green
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- Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J., & Avouris, P. (2002). Carbon Nanotubes as Schottky Barrier Transistors. Physical Review Letters. https://doi.org/10.1103/physrevlett.89.106801
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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