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Giant Dielectric Permittivity Observed in Li and Ti Doped NiO

Wu, Junbo, Nan, Ce-Wen, Lin, Yuanhua, Deng, Yuan·2002·Physical Review Letters

Abstract

A giant low-frequency dielectric constant ( epsilon 0 approximately 10(5)) near room temperature was observed in Li,Ti co-doped NiO ceramics. Unlike currently best-known high epsilon 0 ferroelectric-related materials, the doped oxide is a nonperovskite, lead-free, and nonferroelectric material. It is suggested that the giant dielectric constant response of the doped NiO could be enhanced by a grain boundary-layer mechanism as found in boundary-layer capacitors. In addition, there is about a one-hundred-fold drop in the dielectric constant at low temperature. This anomaly is attributed to a thermally excited relaxation process rather than a thermally driven phase transition, as for that yielding ferroelectrics.

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Metadata

Authors
Wu, J., Nan, C.-W., Lin, Y., & Deng, Y.
Venue
Physical Review Letters
Published
2002-10-30
Volume
89
Issue
21
Pages
217601-217601
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2090329884
Cited by
725
References
0
FWCI
7.25
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Giant Dielectric Permittivity Observed in Li and Ti Doped NiO. https://app.cochat.ai/papers/10.1103/physrevlett.89.217601
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Wu, J., Nan, C.-W., Lin, Y., & Deng, Y. (2002). Giant Dielectric Permittivity Observed in Li and Ti Doped NiO. Physical Review Letters. https://doi.org/10.1103/physrevlett.89.217601

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