Cited by 863Quantum and electron transport phenomenaMagnetic properties of thin films2D Materials and Applications

Nonballistic Spin-Field-Effect Transistor

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Schliemann, John, Egues, J. Carlos, Loss, Daniel·2003·Physical Review Letters

Abstract

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.

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Crossref · 10.1103/physrevlett.90.146801

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  • Tuning is directly achieved by applying an electrical field to rotate LC molecules, allowing precise perturbation of the RD Hamiltonian and providing a novel on-chip platform with dynamical tunability for complete emulation of ZB and further relativistic quantum effects at room temperature.

    “Tuning is directly achieved by applying an electrical field to rotate the LC molecules, which allows to precisely perturb the RD Hamiltonian and provides a novel on-chip platform with dynamical tunability for the complete emulation of the ZB effect and further relativistic quantum effects at room temperature.”

    From Trembling Motion of Exciton Polaritons Close to the Rashba-Dresselhaus Regime (2024) · cites this paper as [23]

    Split into 2 atoms — 0 confirmed, 2 partially supported, 0 disputed, 0 misattributed, 0 unverifiable. Expand the claim to see per-atom verdicts.

    Experimental — accuracy not yet measured
  • By tuning the external electric voltage applied to the microcavity, LC molecules rotate, leading to tunable optical anisotropy and thus tunable energy gaps between orthogonally linearly polarized modes.

    “As discussed in earlier studies, by tuning the external electric voltage applied to the microcavity, the LC molecules rotate, leading to tunable optical anisotropy, thus tunable energy gaps between orthogonally linearly polarized modes [23].”

    From Trembling Motion of Exciton Polaritons Close to the Rashba-Dresselhaus Regime (2024) · cites this paper as [23]

    The device-operation discussion (p. 2) concerns gate bias and electron spin states in a spin-field-effect transistor; the energy-dispersion discussion (p. 3) concerns spin-orbit coupling in quantum wires. Searches for liquid-crystal rotation, microcavity voltage, optical anisotropy, and polarized-mode energy gaps found no passage addressing the attributed claim. (LLM, conf=0.78)

    Experimental — accuracy not yet measured
  • The successful introduction of liquid crystal molecules into microcavities sustains synthetic spin-orbit coupling with broad tunability and realization of the RD Hamiltonian.

    “More recently, the successful introduction of liquid crystal (LC) molecules into microcavities has been shown to sustain synthetic spinorbit coupling with broad tunability and realization of the RD Hamiltonian [23-26].”

    From Trembling Motion of Exciton Polaritons Close to the Rashba-Dresselhaus Regime (2024) · cites this paper as [23]

    The paper’s p. 1 discussion proposes a semiconductor spin-field-effect transistor with Rashba and Dresselhaus coupling. Our copy does not address liquid-crystal molecules in microcavities, synthetic spin-orbit coupling in that setting, or its claimed broad tunability; searches for those terms returned only semiconductor-device passages. (LLM, conf=0.75)

    Experimental — accuracy not yet measured

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Cites

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Research works printed but not linked: 2

  1. [2]Semiconductor Spintronics and Quantum Computation , eds. D. D. Awschalom, D. Loss, and N. Samarth, Springer, Berlin, 2002.
  2. [9]G. E. Pikus and A. N. Titkov, Spin Relaxation under Optical Orientation in Semiconductors in Optical Orien- tation , F. Meier and B. P. Zakharchenya (Eds.), Elsevier (1984).

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Authors
Schliemann, J., Egues, J. C., & Loss, D.
Affiliations
University of Basel (CH)
Corresponding author
Egues, J. Carlos
Venue
Physical Review Letters
Published
2003-04-08
Volume
90
Issue
14
Pages
146801-146801
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2416241894
Cited by
863
References
0
Citations by year
2026: 18 · 2025: 29 · 2024: 25 · 2023: 31 · 2022: 28 · 2021: 29 · 2020: 35 · 2019: 36 · 2018: 28 · 2017: 30 · 2016: 49 · 2015: 28 · 2014: 34 · 2013: 28 · 2012: 46
FWCI
32.53
Type
journal article
Language
en
Open access
Locations
  • Physical Review Letters (publishedVersion)
  • PubMed (publishedVersion)
  • University of Regensburg Publication Server (University of Regensburg) (acceptedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • edoc (University of Basel) (submittedVersion)
  • arXiv (Cornell University)
  • APS March Meeting Abstracts
  • University of Regensburg Publication Server (University of Regensburg)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Quantum and electron transport phenomena
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Keywords
spin field-effect transistor, spin-orbit coupling, Rashba spin-orbit coupling, Dresselhaus spin-orbit coupling, spin-independent scattering, quantum wires, parabolic dispersion, spintronics

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